| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fcef8222451d0af98d49133088e8a883 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-334 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32082
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76838
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32131 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-461
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2005-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2007-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6269c3db2a60da04646aa2bd494e8c33
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9cfb4f53482f10701fbca95667b27686
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8c240690964f10c488a4f9508ca4311b |
| publicationDate |
2007-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7262139-B2 |
| titleOfInvention |
Method suitable for batch ion etching of copper |
| abstract |
A method for etching metal deposited on a substrate, the method comprising: depositing a metal layer above a substrate; coating at least a portion of the deposited metal layer with a photo-resist; pattering the photo-resist; etching the deposited metal layer with an inert gas plasma at an energy density of less than 0.5 Watt/cm 2 , the substrate being maintained at a temperature of less than 50° C.; and ashing a resultant crust with an ashing gas, the ashing gas comprising CF 4 and O 2 . |
| priorityDate |
2004-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |