| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-482
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02639
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02661 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B1-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-36 |
| filingDate |
2006-04-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2007-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f8562278232bf1a3679f110a9d21a6e2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_769ef55b8eac59ae1cffd826417103a9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a3cc3136c669157615e2733b32bd19cc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2ea3a8586df822f48c8610b449a6554e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_082da6efd10acbe06f5ce977c3448796 |
| publicationDate |
2007-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7262116-B2 |
| titleOfInvention |
Low temperature epitaxial growth of silicon-containing films using close proximity UV radiation |
| abstract |
A method of preparing a clean substrate surface for blanket or selective epitaxial deposition of silicon-containing and/or germanium-containing films. In addition, a method of growing the silicon-containing and/or germanium-containing films, where both the substrate cleaning method and the film growth method are carried out at a temperature below 750° C., and typically at a temperature from about 700° C. to about 500° C. The cleaning method and the film growth method employ the use of radiation having a wavelength ranging from about 310 nm to about 120 nm in the processing volume in which the silicon-containing film is grown. Use of this radiation in combination with particular partial pressure ranges for the reactive cleaning or film-forming component species enable the substrate cleaning and epitaxial film growth at temperatures below those previously known in the industry. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8967860-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7709391-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-112016004265-T5
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007170148-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8598020-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9443728-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015249024-A1 |
| priorityDate |
2004-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |