| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7624 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-792
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-40117 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-72
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115 |
| filingDate |
2005-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2007-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_90f3744d549fbe22f0ab7b747038072a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bee5cd3164ee36333fb64934170f900c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ffa2c89663439b735d3c6db2119186a9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_245f977473ace89f1d28f6104b3917db |
| publicationDate |
2007-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7259433-B2 |
| titleOfInvention |
Non-volatile semiconductor memory device and method for producing same |
| abstract |
The memory device has a plurality of dielectric films including charge storage layers CS having a charge holding capability therein and stacked on an active region of a semiconductor SUB and electrodes G on the plurality of dielectric films. Each charge storage layer CS includes a first nitride film CS 1 made of silicon nitride or silicon oxynitride and a second nitride film CS 2 made of silicon nitride or silicon oxynitride and having a higher charge trap density than the first nitride film CS 1 . The first nitride film CS 1 is formed by chemical vapor deposition using a first gas which contains a first silicon-containing gas containing chlorine with a predetermined percent composition and a nitrogen-containing gas as starting materials. The second nitride film CS 2 is formed by chemical vapor deposition using a second gas which contains a second silicon-containing gas having a lower chlorine percent composition than the above predetermined percent composition and a nitrogen-containing gas as starting materials. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009065849-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8252653-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7816205-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7999308-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8329536-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8258571-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9312349-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011147825-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010099247-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8253183-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8431984-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010123181-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8501568-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9761314-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010283097-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010314679-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006180851-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8426907-B2 |
| priorityDate |
2000-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |