| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c1e3d8364bf64e4ac6e1a9cd5df2bd54 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-34 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26506
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26513 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-544
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-317
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-82 |
| filingDate |
2004-02-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2007-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_41f6356744d178c38f701c6201867b19
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_96bf372b45bd6d29d27db2fb5e593fed
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8b99126a65b81d9da0be1f42339cbaad
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e7c3e54fdc60bf3afc34ca6a9fa517ef |
| publicationDate |
2007-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7259027-B2 |
| titleOfInvention |
Low energy dose monitoring of implanter using implanted wafers |
| abstract |
A method for processing semiconductor wafers, e.g., silicon. The method includes providing a monitor wafer, which is made of a crystalline material. The method includes introducing a plurality of particles within a depth of the material, whereupon the plurality of particles cause the crystalline material to be in an amorphous state. The method also includes introducing a plurality of dopant particles into a selected depth of the crystalline material in the amorphous state using an implantation tool. The amorphous state traps the dopant particles. The method includes subjecting the monitor wafer including the plurality of particles and dopant particles into thermal anneal process to activate the dopant. The sheet resistivity is measured. The method operates the implantation tool using one or more production wafers if the dose of the dopant particles in the monitor water is within a tolerance of a specification limit. |
| priorityDate |
2003-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |