| abstract |
The invention provides semiconductor devices having an output circuit in which transistors do not fail to achieve their original capability, and electrostatic breakdown is difficult to occur. A semiconductor device is equipped with a semiconductor substrate, an element isolation region formed on the semiconductor substrate, a first impurity diffusion region that is formed in the semiconductor substrate and surrounds the element isolation region, a second impurity diffusion region that is formed in the semiconductor substrate, a first wiring electrode and a second wiring electrode that are electrically connected to the first impurity diffusion region on both sides of the element isolation region, an output terminal that outputs signals to outside, a wiring that electrically connects the first wiring electrode and the second wiring electrode to the output terminal, and a third wiring electrode and a fourth wiring electrode that are electrically connected to the second impurity diffusion region corresponding to the first and second wiring electrodes. |