| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66757
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02667
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02672
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02686
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1277 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-77
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-84 |
| filingDate |
2004-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2007-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_090d5e6e668ef9f0c44e2fc2656acff0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_068be48c4391e3965978f32f6e0fe962
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b845fe348f5a6f7fc3b0befeeba9a733
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9c35fd66ee8ee6c337095b2c839af84a |
| publicationDate |
2007-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7235828-B2 |
| titleOfInvention |
Semiconductor device with residual nickel from crystallization of semiconductor film |
| abstract |
It is an object to obtain a crystalline silicon film having preferable characteristics for a thin film transistor. n A crystalline silicon film having improved crystallinity is obtained by the following steps: forming a silicon nitride film substantially in contact with an amorphous silicon film on glass substrate; introducing a catalyst element such as nickel; performing an annealing treatment at a temperature of 500 to 600° C. for crystallization; and further irradiating it with a laser light, thereby a crystalline silicon film having improved crystallinity can be obtained. By using the crystalline silicon film thus obtained, a semiconductor device such as a TFT having improved characteristic can be obtained. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007284581-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I476826-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7795082-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007267704-A1 |
| priorityDate |
1994-02-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |