Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0e433c1625fc509a087c912b440da84b |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53295 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02052 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-427 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02063 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76838 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76814 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-4763 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-461 |
filingDate |
2007-01-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2007-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d9857f6059634a6f5ff86839df62542e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c324fdd48863df8feb8d2c4ab3737aab |
publicationDate |
2007-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-7232768-B2 |
titleOfInvention |
Hydrogen plasma photoresist strip and polymeric residue cleanup process for low dielectric constant materials |
abstract |
A method ( 100 ) of fabricating an electronic device ( 200 ) formed on a semiconductor wafer. The method forms a layer ( 215 ) of a first material in a fixed position relative to the wafer. The first material has a dielectric constant less than 3.6. The method also forms a photoresist layer in ( 216 ) a fixed position relative to the layer of the first material. The method also forms at least one void ( 220 ) through the layer of the first material in response to the photoresist layer. Further, the method subjects ( 106 ) the semiconductor wafer to a plasma which incorporates a gas which includes hydrogen so as to remove the photoresist layer. |
priorityDate |
2000-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |