| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3a62c92e56568bd104089aac22ca487b |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-60
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-826
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-245
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8833 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7685
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76849 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-461
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate |
2004-11-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2007-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cf4fdcf563bdb69b16b11cf017e7b3a3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_19f00e8c4eedd6f1ffe8af466ce50d79
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0ad479d09e850e0e7ff3aa80459b9b51
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9ef7886e83ac66f9b96495ea7c4f6ced
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b8fd1ea4a1a0acd28cb6cb0853ad6c94
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6ea7cb6db95051b8b9850aaf725915e0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c27b497dc7193b97ccfb76b9d1525f1c |
| publicationDate |
2007-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7232765-B1 |
| titleOfInvention |
Utilization of a Ta-containing cap over copper to facilitate concurrent formation of copper vias and memory element structures |
| abstract |
Disclosed are methods for facilitating concurrent formation of copper vias and memory element structures. The methods involve forming vias over metal lines and forming copper plugs, wherein the copper plugs comprise memory element film forming copper plugs (memE copper plugs) and non-memory element forming copper plugs (non-memE copper plugs), forming a tantalum-containing cap over an upper surface of non-memE copper plugs, and depositing memory element films. The tantalum-containing cap prevents the formation of the memory element films in the non-memE copper plugs. The subject invention advantageously facilitates cost-effective manufacturing of semiconductor devices. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9978681-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006216936-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7667220-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008173931-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9123781-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010230816-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010105165-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8597976-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008203572-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013153964-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8610172-B2 |
| priorityDate |
2004-11-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |