| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76846
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76862
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76865
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76808 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate |
2005-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2007-05-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e571a5cfb756c39781a537dc46bd3e2c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5fe6f7fe3116e8777209819c013317b7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ceaff3aab2c662cc1dcabe6dfe116a28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b153b2e03fec4afa364cd1b50ba948c0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c962f704658c5cf343610be404a71a9a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_219f33cc7bc779358bb9ae5fb120dc8f |
| publicationDate |
2007-05-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7217663-B2 |
| titleOfInvention |
Via hole and trench structures and fabrication methods thereof and dual damascene structures and fabrication methods thereof |
| abstract |
Via hole and trench structures and fabrication methods are disclosed. The structure comprises a conductive layer in a dielectric layer, and a via hole in the dielectric layer for exposing a portion of a surface of the conductive layer. A conductive liner covers the exposed surface of the first conductive layer. A trench is formed on the via hole in the dielectric without the conductive liner layer in the trench. Dual damascene structures and fabrications methods are also disclosed. Following the fabrication methods of the via hole and trench structures, a conductive layer is further formed in the via hole and trench structures. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7871829-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007158845-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007205482-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007291194-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8664766-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7528066-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009206485-A1 |
| priorityDate |
2005-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |