| abstract |
The present invention relates to organic semiconductor diodes, in particular, to the diodes with nonlinear current-voltage characteristics, which are used for power switching, rectifying variable signals, and frequency mixing. The organic semiconductor diode with the p-n junction comprises an anode, cathode, a hole transport layer in contact with the anode, and an electron transport layer in contact with the cathode, and two transport layers being in contact with each other. Another aspect of the present invention is a Schottky barrier diode comprising anode, cathode, and an organic semiconductor layer, wherein the semiconductor layer is either hole or electron transport layer. At least one of the transport layers is characterized by a globally ordered crystalline structure with intermolecular spacing of 3.4±0.3 Å in the direction of one crystal axis. One more aspect of the present invention is a method for obtaining an organic semiconductor layer with the electron-hole type of conductivity. |