| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3c754156d9ab873a2efe5a3990dbf627 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-00 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K59-12 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-56 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G09F9-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05B33-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05B33-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05B33-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05B33-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-146 |
| filingDate |
2004-07-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2007-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1b07afb798d540492a6c0dc72cdcaa55
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dbae4af5a72d2713a46a849c9eb5aa9c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c543239fbfe334bc727dc3339ddaf36f |
| publicationDate |
2007-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7211456-B2 |
| titleOfInvention |
Method for electro-luminescent display fabrication |
| abstract |
The present invention discloses a method for fabricating a pixel area of an electro-luminescent display device. At least one buffer layer is formed on a substrate. An etch stop layer is formed on the buffer layer. At least one intermediate layer is formed over the etch stop layer. The intermediate layer is etched to expose the etch stop layer, which has an etch rate substantially selective against that of the intermediate layer. The etch stop layer is etched to expose the buffer layer, which has an etch rate substantially selective against that of the etch stop layer, thereby improving an level uniformity of the exposed buffer layer. |
| priorityDate |
2004-07-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |