Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4df6f469f712a581f6d00e683d5d4028 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3083 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 |
filingDate |
2004-10-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2007-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_01de3fcc9d142c59a2f07a38f61d0cca http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b325d2e4684b21ec3e82400ea8222d5e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8eeaead01f346b620c8a9d11b154b569 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0a23beaf32fe1aa748f3e15be7ac1965 |
publicationDate |
2007-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-7208326-B2 |
titleOfInvention |
Edge protection process for semiconductor device fabrication |
abstract |
An edge protection process for semiconductor device fabrication includes forming a protective layer on the circumferential edge region of a semiconductor substrate. The semiconductor substrate is placed in a plasma atmosphere and trench structures, such as deep trenches and shallow trench isolation structures are etched in the substrate. The protective layer substantially prevents the etching of the circumferential edge region, such that the formation of black silicon is substantially minimized during the etching process. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10629458-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10811282-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013122706-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10832923-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011146703-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8562750-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9997381-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8536025-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8398778-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10804081-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103681970-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008227301-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10892404-B1 |
priorityDate |
2004-10-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |