| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-933
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823814
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823835
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28518
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66636
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1054
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-665 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 |
| filingDate |
2004-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2007-04-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_994f3e3f0b4c4094c3591677ce1faae1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_30fe9448078e24152f5adaa5ec977003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5719b5ace1d9eddf581c899aa9e459ca
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5181e0788cd35bf1438ff4772c584958
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3ec907ab9238d95d4ee9fb668ae802d8 |
| publicationDate |
2007-04-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7202122-B2 |
| titleOfInvention |
Cobalt silicidation process for substrates with a silicon—germanium layer |
| abstract |
A method comprises providing a semiconductor alloy layer on a semiconductor substrate, forming a gate structure on the semiconductor alloy layer, forming source and drain regions in the semiconductor substrate on both sides of the gate structure, removing at least a portion of the semiconductor alloy layer overlying the source and drain regions, and forming a metal silicide region over the source and drain regions. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7807538-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008179752-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8642434-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012146092-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9059316-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009004851-A1 |
| priorityDate |
2003-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |