http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7199021-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0e433c1625fc509a087c912b440da84b |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7842 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823807 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823878 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2004-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2007-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c8bf8619aff8a1d2a253b5553f694a1d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_321374ee077ba79c33fe367245423699 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7b3be6a9e69ee6c132f66fccd6a77ec2 |
| publicationDate | 2007-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-7199021-B2 |
| titleOfInvention | Methods and systems to mitigate etch stop clipping for shallow trench isolation fabrication |
| abstract | The present invention facilitates semiconductor fabrication by maintaining shape and density of an etch stop layer ( 206 ) during trench fill operations. The shape and density of the etch stop layer ( 206 ) is maintained by forming a protective alloy liner layer ( 310 ) on the etch stop layer ( 206 ) prior to trench fill operations. The protective alloy liner ( 310 ) is comprised of an alloy that is resistant to materials employed in the trench fill operations. As a result, clipping and/or damage to the etch stop layer ( 206 ) is mitigated thereby facilitating a subsequent planarization process that employs the etch stop layer ( 206 ). Additionally, selection of thickness and composition ( 1706 ) of the formed protective alloy ( 310 ) yields a stress amount and type ( 1704 ) that is applied to channel regions of unformed transistor devices, ultimately providing for an improvement in channel mobility. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8017062-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009191716-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006046450-A1 |
| priorityDate | 2004-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 47.