| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6a916e03e9b9d6e2e9655219cd75abb5 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7834 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78687
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78606
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66628
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66772
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78639 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2004-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2007-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a2814cf5a639c0a4b102c10515a2370b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a9d88f6a94f7b802332c9be3488558a8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c373af1b5b905c60aecf78e7a93b8120 |
| publicationDate |
2007-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7195963-B2 |
| titleOfInvention |
Method for making a semiconductor structure using silicon germanium |
| abstract |
Silicon carbon is used as a diffusion barrier to germanium so that a silicon layer can be subsequently formed without being contaminated with germanium. This is useful in separating silicon layers from silicon germanium layers in situations in which both silicon and silicon germanium are desired to be present on the same semiconductor device such as for providing different materials for optimizing carrier mobility between N and P channel transistors and for a raised source/drain of silicon in the case of a silicon germanium body. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9070774-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012094456-A1 |
| priorityDate |
2004-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |