| abstract |
A method of bonding semiconductor devices is disclosed. The method comprises providing a first substrate having a first conductive interconnecting structure formed thereon and a second substrate having a second conductive interconnecting structure formed thereon. A first conductive passivation layer is selectively formed over exposed areas of the first conductive interconnecting structure. A second conductive passivation layer is selectively formed over exposed areas of the second conductive interconnecting structure. The first substrate and the second substrate are bonded together in such a way that the first conductive passivation layer bonds to the second conductive passivation layer to create a passivation-passivation interface. |