| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-615 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32051
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-464
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-466
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-60 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-30 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-05
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-45 |
| filingDate |
2004-08-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2007-03-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_17e09abc04dfcbe6294b4e17fa57a242 |
| publicationDate |
2007-03-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7186634-B2 |
| titleOfInvention |
Method for forming metal single-layer film, method for forming wiring, and method for producing field effect transistors |
| abstract |
A method for producing a field effect transistor having source/drain electrodes of metal single-layer film firmly adhering to the gate insulating film is provided. The method includes forming a gate electrode on a support, forming a gate insulating film on the support and the gate electrode, performing treatment with a silane coupling agent on the surface of the gate insulating film, forming source/drain electrodes of metal single-layer film on the gate insulating film which has been treated with a silane coupling agent, and forming a channel-forming region of semiconductor layer on the gate insulating film held between the source/drain electrodes. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007099354-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7561219-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7413922-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007129473-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9219199-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008308793-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8153267-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009236592-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006061702-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8081265-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009104566-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8030644-B2 |
| priorityDate |
2003-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |