| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_dc62792656aa2e858252e97e5ffaca79 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-06226
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18358
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18341
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0261
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-32366
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-32341
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-06203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18313 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18369
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18372 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-323
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-20 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-183 |
| filingDate |
2005-01-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2007-02-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_438631aca4c9f8a67bd9682ed834b352 |
| publicationDate |
2007-02-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7176046-B2 |
| titleOfInvention |
Apparatus and a method of fabricating inversion channel devices with precision gate doping for a monolithic integrated circuit |
| abstract |
A family of high speed transistors and optoelectronic devices are obtained on a monolithic substrate by adding two sheets of planar doping together with a wideband cladding layer to the top of a pseudomorphic high electron mobility transistor (PHEMT) structure. The two sheets are of the same polarity which is opposite to the modulation doping of the PHEMT and they are separated by a lightly doped layer of specific thickness. The combination is separated from the PHEMT modulation doping by a specific thickness of undoped material. The charge sheets are thin and highly doped. The top charge sheet achieves low gate contact resistance and the bottom charge sheet defines the capacitance of the field-effect transistor (FET) with respect to the modulation doping layer of the PHEMT. The structure produces a pnp bipolar transistor, enhancement and depletion type FETs, a vertical cavity surface emitting laser, and a resonant cavity detectors.β |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9401400-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012190313-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9490321-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9082637-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8509682-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7877058-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008166981-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8175523-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10116115-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011151776-A1 |
| priorityDate |
1996-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |