| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7851 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0266
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823418
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7843 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-60
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-58
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-94
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 |
| filingDate |
2004-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2007-01-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3db084b30f8764c2049d03ffc876a0a7 |
| publicationDate |
2007-01-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7166876-B2 |
| titleOfInvention |
MOSFET with electrostatic discharge protection structure and method of fabrication |
| abstract |
A semiconductor circuit comprises a semiconductor substrate, a semiconductor device having a drain region disposed in the substrate, and a reverse doped region laterally adjacent and laterally contacting the drain region wherein the reverse doped region has an opposite doping type from that of the drain region and a dopant concentration higher than that of the semiconductor substrate, the reverse doped region and the drain forming a p-n junction. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10319662-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10741541-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018096985-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10483258-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8730628-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9783950-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013107402-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8698247-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007164325-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012313175-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7326617-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8946001-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8120112-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007048958-A1 |
| priorityDate |
2004-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |