http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7161640-B2

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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1368
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-136
filingDate 2004-08-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2007-01-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_29fa42a19634981e4a8fb83026d354ef
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2159a95e17ba89ffcbafccf970ca5d68
publicationDate 2007-01-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-7161640-B2
titleOfInvention Shield junction thin film transistor structure
abstract The present invention provides a Shield-Junction thin film transistor structure. According to the structure of the present invention, on top of the passivation layer, there is an island of protection electrode electrically insulated from the bottom ITO electrode. The protection electrode electrically connects with the gate line through a via hole and covers part of the drain electrode and its adjacent part of the TFT channel. Since the protection electrode does not cover or overlap with the source electrode, it has a negligible contribution to the data-line capacitance.
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priorityDate 2004-01-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 30.