| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_48022e6a70641230cd5f87ec7aabc491 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K2201-0166
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K2201-0195
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08J2379-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K2201-0154
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K3-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K2203-0783
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K2203-0793
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K3-4614 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-405
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K3-002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08J7-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-40 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K3-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K3-46 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08J7-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08J7-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K3-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate |
2001-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2006-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4e32026e15cd6c94c009752db6b73222 |
| publicationDate |
2006-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7144817-B2 |
| titleOfInvention |
Etching solutions and processes for manufacturing flexible wiring boards |
| abstract |
The disclosure relates to methods and solutions for precisely and rapidly etching a polyimide resin layer. Etching solutions of the present invention include 3–65% by weight of a diol containing 3 to 6 carbon atoms or a triol containing 4 to 6 carbon atoms, 10–55 % by weight of an alkali compound and water in an amount of 0.75–3.0 times the amount of the alkali compound, and can be used at 65° C. or more to rapidly etch a polyimide resin layer having an imidation degree of 50–98 % without unfavorably affecting the working atmosphere. Even if the resin layer is completely imidated after etching, the etching pattern of the resulting resin layer is not deformed with a decreased contamination by impurity ions as compared with those obtained using conventional etching solutions. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9972696-B2 |
| priorityDate |
2000-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |