http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7138307-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_51d028c578ae85cb937b5b34a5129fbc |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823842 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 |
| filingDate | 2004-08-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2006-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_60f121b3bacd29ea5959440dcfb69e14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2317439bec0122f24bc4bda90631d50a |
| publicationDate | 2006-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-7138307-B2 |
| titleOfInvention | Method to produce highly doped polysilicon thin films |
| abstract | The present invention describes a method of forming a highly doped polysilicon film. According to an embodiment of the present invention, a first silicon film is formed on a substrate. The first silicon film is then doped. Next, a second silicon film is formed on the doped first silicon film. The second silicon film is then doped. |
| priorityDate | 2004-08-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.