http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7115467-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0e433c1625fc509a087c912b440da84b |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-75 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 |
| filingDate | 2004-07-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2006-10-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3144595d2bae0a090f3bce7a313c27e7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ea0dc868955dd0093beef5f0a2738e80 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c38f1dd0743084d0b5031c47dc4b37e6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6891f32016ce819980f4d0926aec84e5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4b4ff2239b083550b2a6833b8a54139b |
| publicationDate | 2006-10-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-7115467-B2 |
| titleOfInvention | Metal insulator metal (MIM) capacitor fabrication with sidewall barrier removal aspect |
| abstract | A method ( 10 ) of forming a MIM (metal insulator metal) capacitor is disclosed whereby adverse affects associated with copper diffusion are mitigated even as the capacitor is scaled down. A layer of bottom electrode/copper diffusion barrier material ( 136 ) is formed ( 16 ) within an aperture ( 128 ) wherein the capacitor ( 100 ) is to be defined. The bottom electrode layer ( 136 ) is formed via a directional process so that a horizontal aspect ( 138 ) of the layer ( 136 ) is formed over a metal ( 110 ) at a bottom of the aperture ( 128 ) to a thickness ( 142 ) that is greater than a thickness ( 144 ) of a sidewall aspect ( 148 ) of the layer ( 136 ) formed upon sidewalls ( 132 ) of the aperture ( 128 ). Accordingly, the thinner sidewall aspects ( 148 ) are removed during an etching act ( 18 ) while some of the thicker horizontal aspect ( 138 ) remains. A layer of capacitor dielectric material ( 150 ) is then conformally formed ( 20 ) into the aperture 128 and over the horizontal aspect ( 138 ). A layer of top electrode material ( 152 ) is then conformally formed ( 22 ) over the layer of capacitor dielectric material ( 150 ) to complete the capacitor stack ( 154 ). |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009148996-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9627256-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008064163-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008185684-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007102821-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7485963-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014239501-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7611958-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7439151-B2 |
| priorityDate | 2004-07-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 55.