| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8cf8d77ac0eff1767b22d2fb9445b64d |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B44C1-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C03C15-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-00 |
| filingDate |
2004-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2006-09-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7b0c7b3f6170d84efd02ecdcc649ae7f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e95227680aabf6f46da519b57daa7821
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7a2e2df03b75bfb0d8b50fb8c266d362 |
| publicationDate |
2006-09-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7105454-B2 |
| titleOfInvention |
Use of ammonia for etching organic low-k dielectrics |
| abstract |
Method for etching organic low-k dielectric using ammonia, NH3, as an active etchant. Processes using ammonia results in at least double the etch rate of organic low-k dielectric materials than processes using N2/H2 chemistries, at similar process conditions. The difference is due to the much lower ionization potential of NH3 versus N2 in the process chemistry, which results in significantly higher plasma densities and etchant concentrations at similar process conditions. |
| priorityDate |
2001-02-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |