| abstract |
Method and system for fabricating an electrical interconnect capable of supporting very high current densities (10 6 –10 10 Amps/cm 2 ), using an array of one or more carbon nanotubes (CNTs). The CNT array is grown in a selected spaced apart pattern, preferably with multi-wall CNTs, and a selected insulating material, such as SiO w or Si u N v , is deposited using CVD to encapsulate each CNT in the array. An exposed surface of the insulating material is planarized to provide one or more exposed electrical contacts for one or more CNTs. |