http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7091097-B1

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publicationDate 2006-08-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-7091097-B1
titleOfInvention End-of-range defect minimization in semiconductor device
abstract A method of fabricating a semiconductor device comprises forming a gate electrode over a substrate and forming deep amorphous regions within the substrate. And implanting dopants to form deep source/drain regions at a depth less than that of the deep amorphous regions, partially re-crystallizing portions of the deep amorphous regions to reduce their depth, and re-crystallizing the reduced amorphous regions to form activated final source/drain regions.
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