Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3a62c92e56568bd104089aac22ca487b |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6659 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-268 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2658 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26506 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7833 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26513 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
filingDate |
2004-09-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2006-08-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a18a98ce967dd5faabd640b60a7d183e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_59490c024c873facaaed33323ec9891b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a5d95f137231163f3e6395c968e3368a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_35059fee83e41777ea2d4100032d5aa1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_92d3e54b9bcae87bd892d8ce7365628b |
publicationDate |
2006-08-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-7091097-B1 |
titleOfInvention |
End-of-range defect minimization in semiconductor device |
abstract |
A method of fabricating a semiconductor device comprises forming a gate electrode over a substrate and forming deep amorphous regions within the substrate. And implanting dopants to form deep source/drain regions at a depth less than that of the deep amorphous regions, partially re-crystallizing portions of the deep amorphous regions to reduce their depth, and re-crystallizing the reduced amorphous regions to form activated final source/drain regions. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7214592-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7247547-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7737012-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011212591-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006284249-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016372599-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007054444-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-101826462-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006148215-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005112831-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10170314-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007267660-A1 |
priorityDate |
2004-09-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |