| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5c512af6482bd66d2c8760c77cf9ead6 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-34306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-305
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3095 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y20-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18308 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-30 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-183
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S3-04 |
| filingDate |
2003-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2006-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a413ae0efc7401d2c6262b0b5df4ef81 |
| publicationDate |
2006-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7085298-B2 |
| titleOfInvention |
Tunnel junction utilizing GaPSb, AlGaPSb |
| abstract |
A vertical cavity surface emitting laser (VCSEL) includes a substrate; a first mirror stack over the substrate; an active region having a plurality of quantum wells over the first mirror stack; a tunnel junction over the active region, a p-layer of the tunnel junction including GaPSb or AlGaPSb; and a second mirror stack over the tunnel junction. The p-layer including GaPSb or AlGaPSb can be used to form a tunnel junction with an n-doped layer of InP or AlInAs, or with a lower bandgap material such as InGaAs, AlInGaAs or InGaAsP. Such tunnel junctions are especially useful for a long wavelength VCSEL. |
| priorityDate |
2003-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |