| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8cf8d77ac0eff1767b22d2fb9445b64d |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-09
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0273
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0332 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-09
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate |
2003-05-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2006-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7089cdf44226d78ffdf35004cd3e72eb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_32166cd26992cf35d664820101b836b4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7b0c7b3f6170d84efd02ecdcc649ae7f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_76a4284acf8462086dea415911a93adf |
| publicationDate |
2006-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7049052-B2 |
| titleOfInvention |
Method providing an improved bi-layer photoresist pattern |
| abstract |
A method for etching a feature in a layer is provided. An underlayer of a polymer material is formed over the layer. A top image layer is formed over the underlayer. The top image layer is exposed to patterned radiation. A pattern is developed in the top image layer. The pattern is transferred from the top image layer to the underlayer with a reducing dry etch. The layer is etched through the underlayer, where the top image layer is completely removed and the underlayer is used as a pattern mask during the etching the layer to transfer the pattern from the underlayer to the layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10643858-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011256486-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7785753-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8227180-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10990012-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007269721-A1 |
| priorityDate |
2003-05-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |