| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28202 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823462
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28194
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28185
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-518
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate |
2004-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2006-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5719b5ace1d9eddf581c899aa9e459ca
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3ec907ab9238d95d4ee9fb668ae802d8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ec240496bd0da580e10ad399ecc76779
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5181e0788cd35bf1438ff4772c584958
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_928316da69056c5eb60c73df0ef995bf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c809df2efd5eca9da0c1cf00a4142a44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_81796a4156c0edb40e882cd862c76672 |
| publicationDate |
2006-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7045847-B2 |
| titleOfInvention |
Semiconductor device with high-k gate dielectric |
| abstract |
An integrated circuit includes a substrate, a first transistor, and a second transistor. The first transistor has a first gate dielectric portion located between a first gate electrode and the substrate. The first gate dielectric portion includes a first high-permittivity dielectric material and/or a second high-permittivity dielectric material. The first gate dielectric portion has a first equivalent silicon oxide thickness. The second transistor has a second gate dielectric portion located between a second gate electrode and the substrate. The second gate dielectric portion includes the first high-permittivity dielectric material and/or the second high-permittivity dielectric material. The second gate dielectric portion has a second equivalent silicon oxide thickness. The second equivalent silicon oxide thickness may be different than the first equivalent silicon oxide thickness. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9082789-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006175671-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8044471-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7354830-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009101919-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8253215-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8314446-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006177997-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006255392-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012289040-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006263962-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006054961-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7416933-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010283109-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7297587-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006030096-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7772062-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009108377-A1 |
| priorityDate |
2003-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |