| abstract |
In a semiconductor optical modulator of this invention, each quantum-well layer and each barrier layer of a quantum-well structure serving as a light absorption layer are respectively made of In 1-X-Y Ga X Al Y N (0≦X, Y≦1, 0≦X+Y≦1) and In 1-X′-Y′ Ga X′ Al Y′ N (0≦X′, Y′≦1, 0≦X′+Y′≦1). An electric field is being generated in the light absorption layer by spontaneous polarization. |