| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c1e3d8364bf64e4ac6e1a9cd5df2bd54 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-34 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28185
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28202
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-518 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-544 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 |
| filingDate |
2004-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2006-04-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_91b78b35cbf0abe7eab5c2d46a200ee6 |
| publicationDate |
2006-04-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7033846-B2 |
| titleOfInvention |
Method for manufacturing semiconductor devices by monitoring nitrogen bearing species in gate oxide layer |
| abstract |
A method for processing integrated circuit devices. The method includes introducing a test wafer into a production run of wafers to form a run of wafers to be processed. Each of the wafers is before a gate dielectric production process. The method inserts the run of wafers into a process for gate dielectric production, e.g., gate oxide. The method forms a silicon oxynitride layer to a predetermined thickness of less than 30 Angstroms at a predetermined temperature using a nitrogen bearing species and an oxygen bearing species, alone or in combination. The method removes the test wafer from the run and forms a second oxidation overlying the silicon oxynitride layer to a second thickness, which is based substantially upon a nitrogen bearing concentration in the silicon oxynitride layer. The method determines a difference value between the first predetermined thickness and the second thickness. A step of correlating the difference value to one of a plurality of nitrogen concentrations to determine a nitrogen concentration in the first predetermined thickness is included. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7869040-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7764376-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7349079-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7564552-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005254049-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005254050-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7623239-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008252889-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009279088-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7359052-B2 |
| priorityDate |
2003-08-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |