| abstract |
A metal insulator semiconductor field effect transistor (MISFET) is disclosed comprising a source layer being made with a material having a source band-gap (EG 2 ) and a source mid-gap value (EGM 2 ), the source layer having a source Fermi-Level (EF 2 ). A drain layer has a drain Fermi-Level (EF 4 ). A channel layer is provided between the source layer and the drain layer, the channel layer being made with a material having a channel band-gap (EG 3 ) and a channel mid-gap value (EGM 3 ), the channel layer having a channel Fermi-Level (EF 3 ). A source contact layer is connected to the source layer opposite the channel layer, the source contact layer having a source contact Fermi-Level (EF 1 ). A gate electrode has a gate electrode Fermi-Level (EF 6 ). The source band-gap is substantially narrower (EG 2 ) than the channel band-gap (EG 3 ). The source contact Fermi-Level (EF 1 ), the source Fermi-Level (EF 2 ), the channel Fermi-Level (EF 3 ), the drain Fermi-Level (EF 4 ) and the gate electrode Fermi-Level (EF 6 ) are equal to the source mid-gap value (EGM 2 ) and the channel mid-gap value (EGM 3 ), within a predetermined tolerance value, when no voltage is applied to the device. |