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filingDate 2002-08-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2006-01-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-6986851-B2
titleOfInvention Dry developing method
abstract A dry developing method for drawing a resist formed on a processed body by leading processing gas between parallel flat electrodes installed in a vacuum processing container and forming the plasma of the processing gas by applying a high frequency power to the electrodes, comprising the step of plasma-processing the resist on an etched layer having an already developed upper layer resist containing silicon and a lower layer resist installed in contact with the lower layer of the upper layer resist, wherein the lower layer resist is processed by a first process for plasma-processing by using the mixed gas of carbon monoxide gas and oxygen gas and a second step for plasma-processing by using the mixed gas of nitrogen gas and hydrogen gas, whereby an accurate drawing can be applied efficiently to the resist.
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