| abstract |
Hydrogen barriers and fabrication methods are provided for protecting ferroelectric capacitors (C FE ) from hydrogen diffusion in semiconductor devices ( 102 ), wherein nitrided aluminum oxide (N—AlO x ) is formed over a ferroelectric capacitor (C FE ), and one or more silicon nitride layers ( 112, 117 ) are formed over the nitrided aluminum oxide (N—AlO x ). Hydrogen barriers are also provided in which an aluminum oxide (AlO x , N—AlO x ) is formed over the ferroelectric capacitors (C FE ), with two or more silicon nitride layers ( 112, 117 ) formed over the aluminum oxide (AlO x , N—AlO x ), wherein the second silicon nitride layer ( 112 ) comprises a low silicon-hydrogen SiN material. |