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Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b36b04a48575d56eac6b8fb1d967278c |
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0878 |
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7816
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0634 |
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-58
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2003-05-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2005-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e1aecbc88a11bf3a2e0b88d68525d8fe
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_54ca071417c121eff29a2fc32bf17af5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fc307ff3e2afbf3d498d793220c32538 |
| publicationDate |
2005-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6979875-B2 |
| titleOfInvention |
Reduced surface field technique for semiconductor devices |
| abstract |
A power device and a method for manufacturing the same are provided. The power device comprises a first conductive semiconductor substrate; a second conductive buried layer formed to a certain depth within the semiconductor substrate; a second conductive epitaxial layer formed on the conductive buried layer; a first conductive well formed within the conductive epitaxial layer; a second conductive well formed within the second conductive epitaxial layer, on both sides of the first conductive well; a second conductive drift region formed in predetermined portions on the first and the second conductive well; and a lateral double diffused MOS transistor formed in the second conductive drift region. The breakdown voltage of the power device is controlled according to a distance between the first conductive well and the second conductive buried layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010258867-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010019318-A1
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008237707-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9196681-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011241114-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7999315-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8816434-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015243776-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9224862-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8847332-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102008038300-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011012204-A1
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010245369-A
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010163989-A1
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10896954-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011127607-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009230468-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8008726-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8431990-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008138954-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8232596-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006145249-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2009117279-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010065909-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2009117279-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101098161-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012267715-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10153213-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7655980-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8349717-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8362557-B2 |
| priorityDate |
2002-05-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |