| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f187eb8cb31e70d4acd428dd8beedd4f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0042
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-145
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18358
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18311 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02178
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31666
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02233
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02255
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67253 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-183
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343 |
| filingDate |
2002-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2005-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_477a72acda86288928b56fab7d9fd1c8 |
| publicationDate |
2005-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6979581-B2 |
| titleOfInvention |
Method of manufacturing semiconductor light emitting device and oxidation furnace |
| abstract |
A sample stand is set in a chamber provided with an observation window on its upper surface and a heater for heating a sample is provided in the vicinity of the sample stand. Then, a microscope, a camera and a television monitor are connected and mounted outside the observation window of the chamber. The microscope is mounted such that a specific layer of the sample is focused on and can be observed. According to a manufacturing method of the preset invention, oxidation treatment is performed in such equipment while an oxidation process of the specific layer (semiconductor layer for selective oxidation) of the sample is observed. As a result, the amount of oxidation of the semiconductor layer for selective oxidation can be strictly controlled, a semiconductor light emitting device which restricts a current into a certain region can be obtained with high yield ratio, and there is obtained an oxidation furnace which can precisely control the amount of oxidation of the semiconductor layer for selective oxidation. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8658449-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010026779-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010260222-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006016397-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8670015-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8237761-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I387129-B |
| priorityDate |
2001-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |