http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6972239-B1

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filingDate 2004-08-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2005-12-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ca3cea4b606983fc77a3daee781c7b30
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publicationDate 2005-12-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-6972239-B1
titleOfInvention Low temperature MOCVD processes for fabrication of PrXCa1-xMnO3 thin films
abstract A method of fabricating a PCMO thin film at low temperature for use in a RRAM device includes preparing a PCMO precursor; preparing a substrate; placing the substrate into a MOCVD chamber; introducing the PCMO precursor into the MOCVD chamber to deposit a PCMO thin film on the substrate; maintaining a MOCVD vaporizer at between about 240° C. to 280° C. and maintaining the MOCVD chamber at a temperature of between about 300° C. to 400° C.; removing the PCMO thin-film bearing substrate from the MOCVD chamber; and completing the RRAM device.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8367513-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8395199-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7029982-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8308915-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8454810-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7402456-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006088974-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7932548-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005239262-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007238246-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017352604-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10109549-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7407858-B2
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Total number of triples: 38.