| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-12044 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5222
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5329
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76888 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 |
| filingDate |
2001-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2005-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_481e201e94abef80ad7b01ffaaddfd1e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_730cc2d56132a2fb311bd8ab386ea06e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_17a8889674c91044d451131e1a43c2b2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8db9a767f30e5602cc03f7d25f1e5803
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9a3d525fd4794a04daa752b759dc0299
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_12e81edfcac975b34e7c853ada2607ba |
| publicationDate |
2005-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6943451-B2 |
| titleOfInvention |
Semiconductor devices containing a discontinuous cap layer and methods for forming same |
| abstract |
Novel semiconductor devices containing a discontinuous cap layer and possessing a relatively low dielectric constant are provide herein. The novel semiconductor devices includes at least a substrate, a first dielectric layer applied on at least a portion of the substrate, a first set of openings formed through the dielectric layer to expose the surface of the substrate so that a conductive material deposited within and filling the openings provides a first set of electrical contact conductive elements and a discontinuous layer of cap material covering at least the top of the conductive elements to provide a first set of discontinuous cap elements. Methods for forming the semiconductor devices are also provided. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013089979-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11018087-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006134906-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9368565-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009243101-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7795155-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8119322-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8815733-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8709939-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008220615-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7217648-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102324427-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102324427-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008179280-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8492264-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014217550-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8659173-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8404145-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006252258-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11031339-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7851358-B2 |
| priorityDate |
2001-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |