| abstract |
A family of optical waveguide structures and high speed optoelectronic/transistor devices are obtained from a multilayer structure that includes a modulation doped quantum well structure formed over a DBR mirror. The optical waveguide structure is realized by implanting n-type ions to form a pair of n-type implant regions that define a waveguide region therebetween. An oxide layer (e.g., SiO 2 ) is deposited over the waveguide region. A thermal annealing operation causes the oxide layer to introduce impurity free vacancy disordering that substantially eliminates absorption in the waveguide region. The waveguide region contributes to lateral confinement of light therein. An etching operation etches through the n-type implant regions to define sidewalls, which are subject to an oxidation operation that produces oxidized sections along the sidewalls. The oxide layer is removed, and a top distributed bragg reflector mirror is formed over the waveguide region. The resulting structure realizes an optical waveguide. Optoelectronic devices (including lasers, detectors, modulators, amplifiers) and transistor devices (including enhancement-mode and depletion mode JFET devices and bipolar-type devices) are also realized from the same multi-layer structure and share many of the fabrication steps of the optical waveguide, to thereby provide for efficient monolithic integration of a broad array of optical/optoelectronic/electronic devices. |