| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3a62c92e56568bd104089aac22ca487b |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53295
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2003-04-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2005-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9c243222169c2f19db0bfb1ce9901b37
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_65a270e50bd59dc049af9d18a26ca634
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_67629e4828d0fdd71e99721ddd7ac62c |
| publicationDate |
2005-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6927161-B2 |
| titleOfInvention |
Low-k dielectric layer stack including an etch indicator layer for use in the dual damascene technique |
| abstract |
A low-k dielectric layer stack is provided including a silicon based dielectric material with a low permittivity, wherein an intermediate silicon oxide based etch indicator layer is arranged at a depth that represents the depth of a trench to be formed in the dielectric layer stack. A thickness of the etch indicator layer is sufficiently small to not unduly compromise the overall permittivity of the dielectric layer stack. On the other hand, the etch indicator layer provides a prominent optical emission spectrum to reliably determine the time point when the etch process has reached the etch indicator layer. Thus, the depth of trenches in highly sophisticated low-k dielectric layer stacks may reliably be adjusted to minimize resistance variations of the metal lines. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7611758-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7755192-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11127683-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007006451-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7452807-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005100683-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011079918-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009243112-A1 |
| priorityDate |
2002-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |