| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1af8df51ce24ca931ae718fb747f6aa0 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32697
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32623
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-5096 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-509
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate |
2001-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2005-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7cafbc50bb1fddd34e158e7117405f95
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bf4efc12b19f1fed890180f69ceb06fb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8e69c088b35f361685cc41b3bf91d396
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2107a117f5f23325850a81f55281fd5a |
| publicationDate |
2005-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6926934-B2 |
| titleOfInvention |
Method and apparatus for deposited film |
| abstract |
In a deposited-film formation method or apparatus according to the present invention, which comprises providing a discharge electrode in a vacuum vessel equipped with exhaust means, supplying a hydrogen gas and a raw material gas for forming a deposited film which contains at least an Si element, generating plasma from the material gas by supplying high frequency electric power to the discharge electrode, and forming a deposited film on a substrate in the vacuum vessel by plasma CVD, wherein an auxiliary electrode is arranged in plasma in the vacuum vessel, a periodically changing voltage is applied to the auxiliary electrode without causing a discharge to form a deposited film, whereby it is possible to form an amorphous-silicon-based deposited film having good quality and good uniformity over a large area at a high rate of film formation. |
| priorityDate |
2000-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |