| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b2d32a1324eb3a240649ffee8d475d63 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-0385
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-485
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-053 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66181
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-0383
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-0387
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-373 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-334 |
| filingDate |
2004-10-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2005-07-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a930b635cc87a993416832c58021a8b5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_69aaeda1bad828289d49ec64a3f1c774
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_37660544ea1c79c0f38175e0fd59f9c9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_392b441729cf0a766295185c6e4ca6b8 |
| publicationDate |
2005-07-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6919245-B2 |
| titleOfInvention |
Dynamic random access memory cell layout and fabrication method thereof |
| abstract |
A dynamic random access memory (DRAM) cell layout for arranging deep trenches and active areas and a fabrication method thereof. An active area comprises two vertical transistors, a common bitline contact and two deep trenches. The first vertical transistor is formed on a region where the first deep trench is partially overlapped with the first gate conductive line. The second vertical transistor is formed on a region where the second deep trench is partially overlapped with the second gate conductive line. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008227257-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008233706-A1 |
| priorityDate |
2003-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |