http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6905960-B2

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publicationDate 2005-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-6905960-B2
titleOfInvention Method of forming a contact in a semiconductor device
abstract In a method of forming a contact in a semiconductor device, an insulating layer is formed on the semiconductor substrate. Then, a contact hole is formed by selectively etching the insulating layer. A barrier metal layer is deposited on side and bottom surfaces of the contact hole and on a top surface of the insulating layer to a uniform thickness. A wetting layer of an oxidation-resistive metal material is deposited on the barrier metal layer. A metal layer is formed on the wetting layer and fills the contact hole to thereby form a contact in the semiconductor device.
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018138125-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010089940-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9960078-B1
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Total number of triples: 37.