| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73d4b2bc69bd05ec91d7c1d04f7bfb36 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-52 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0547
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02168
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02008
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-035281 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0352
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0216
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-042 |
| filingDate |
2003-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2005-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eac9df343ba4c48294079d5a0d914dfd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_201f9d77dc86108a7bc3f57ed38b63fc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6284665549e563ab7b5ddba3f53eb7ce
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9de95a65b123a3f0eb1d5d42df6bba71
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3a542bdf3a494dece702b1e7e6ee8185 |
| publicationDate |
2005-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6897085-B2 |
| titleOfInvention |
Method of fabricating an optical concentrator for a photovoltaic solar cell |
| abstract |
A method of fabricating a photovoltaic solar cell is provided. A plurality of generally spherical semiconductor elements are provided. Each of the semiconductor elements has a core and an outer surface surface forming a p-n junction. An anti-reflection coating is deposited on the outer surface of each of the semiconductor elements and each of the semiconductor elements is bonded into a perforated aluminum foil array thereby providing ohmic contact to a first side of the p-n junction. The anti-reflection coating is removed from a portion of each of the semiconductor elements and then the core is exposed, thereby allowing ohmic contact to be made to a second side of the p-n junction. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7312097-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018019364-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2008050931-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005217721-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10622505-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010206361-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10432137-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10177270-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10923616-B2 |
| priorityDate |
2003-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |