Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fe950d708c7cd3395969c85dcbe67c67 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-13091 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7809 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-81801 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-10253 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-81 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01068 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-1305 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-14 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-3677 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7811 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7813 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-60 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-367 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-34 |
filingDate |
2002-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2005-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_00bdb74a0022d7b8689bf37e3d9b1920 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d1d2219939848c6e1fce6ee8735ffe55 |
publicationDate |
2005-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-6894397-B2 |
titleOfInvention |
Plural semiconductor devices in monolithic flip chip |
abstract |
A flip chip structure contains laterally spaced semiconductor devices such as MOSFETs in a common chip. A deep trench isolates the devices. Contacts are connected to the source drain and gate electrode (or other electrodes) and are interconnected as required for a circuit function either within the chip or on the support board. Ball contacts are connected to the electrodes. The opposite surface of the chip to that in which the devices are formed receives a copper or other metal layer which is patterned to increase its area for heat exchange. The surface of the copper is coated with black oxide to increase its ability to radiate heat. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9012990-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7501702-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014103393-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005285238-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009117690-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7842555-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008251912-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7872350-B2 |
priorityDate |
2001-10-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |