http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6888188-B2
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c3a2f00e72ba6e4c09b6da573427fbed |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-409 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31691 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-55 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02194 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02197 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02186 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
filingDate | 2002-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2005-05-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_385c3b494374adc95d7735ed8acd8627 |
publicationDate | 2005-05-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | US-6888188-B2 |
titleOfInvention | Capacitor constructions comprising perovskite-type dielectric materials and having different degrees of crystallinity within the perovskite-type dielectric materials |
abstract | The invention includes a capacitor construction. A capacitor electrode has a perovskite-type dielectric material thereover. The perovskite-type dielectric material has an edge region proximate the electrode, and a portion further from the electrode than the edge region. The portion has a different amount of crystallinity than the edge region. The invention also includes a method of forming a capacitor construction. A capacitor electrode is provided, and a perovskite-type dielectric material is chemical vapor deposited over the first capacitor electrode. The depositing includes flowing at least one metal organic precursor into a reaction chamber and forming a component of the perovskite-type dielectric material from the precursor. The precursor is exposed to different oxidizing conditions during formation of the perovskite-type dielectric material so that a first region of the dielectric material has more amorphous character than a second region of the dielectric material. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006120020-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7979120-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9627501-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7428137-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8229554-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008154320-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8951903-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012202358-A1 |
priorityDate | 2001-08-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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