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publicationDate 2005-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-6867466-B2
titleOfInvention Memory device and method for forming a passivation layer thereon
abstract A memory device with an improved passivation structure. The memory device includes a semiconductor substrate with memory units thereon, an interconnect structure over the surface of the semiconductor substrate to connect with the memory units, and a passivation structure over the surface of the interconnect structure. The passivation structure comprises a dielectric layer over the surface of the interconnect structure and a silicon-oxy-nitride (SiOxNy) layer over the surface of the dielectric layer.
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