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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7685
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76867
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
filingDate 2002-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2005-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_27d5e02520f3050ff3402fd7bc1a17f6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b51e30378bb17ea6392f81495306b86d
publicationDate 2005-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-6867135-B1
titleOfInvention Via bottom copper/barrier interface improvement to resolve via electromigration and stress migration
abstract A method of forming a copper/barrier layer interface comprising the following sequential steps. A structure having a lower copper layer formed thereover is provide. A patterned dielectric layer is formed over the lower copper layer. The patterned dielectric layer having an opening exposing a portion of the lower copper layer. The exposed portion of the lower copper layer is converted to a copper silicide portion. A barrier layer is formed upon the patterned dielectric layer and the copper silicide portion, lining the opening, whereby the lower copper layer/barrier layer interface is formed such that the barrier layer contacts the copper silicide portion to form an interface.
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