| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5b697aa5d3346981b6c6de88dcb0d50d |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G2650-58
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-1047
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-96 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02137
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D183-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-442
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7682
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-312
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08L71-02 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D183-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G77-442
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08L71-02 |
| filingDate |
2003-05-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2005-02-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_93f2147ccac78585664c2b6ef873861f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c98809859962eb4caf6aaadd668cb265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ad50eae2bb1e7bb2479bc3f4e040896d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f79e640cde8dcebacab0e7f6b45f5d51 |
| publicationDate |
2005-02-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6852648-B2 |
| titleOfInvention |
Semiconductor device having a low dielectric constant dielectric material and process for its manufacture |
| abstract |
A process for fabricating an integrated semiconductor device with a low dielectric constant material and an integrated semiconductor device with the low dielectric constant material interposed between two conductors is disclosed. The low dielectric constant material has a dielectric constant of less than about 2.8. The low dielectric constant material is a porous glass material with an average pore size of less than about 10 nm. The low dielectric constant material is formed on a semiconductor substrate with circuit lines thereover by combining an uncured and unmodified glass resin with an amphiphilic block copolymer. The amphiphilic block copolymer is miscible in the uncured glass resin. The mixture is applied onto the semiconductor substrate and the glass resin is cured. The glass resin is further processed to decompose or otherwise remove residual block copolymer from the cured glass resin. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9502239-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015262817-A1 |
| priorityDate |
2000-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |