| abstract |
A method for manufacturing semiconductor device is disclosed which forms a high dielectric layer using atomic layer deposition (ALD). The method for forming a high dielectric layer having a first metal element, a titanium atom and an oxygen atom includes: on a surface of a substrate, adsorbing a first organic source combining a ligand, wherein the ligand includes at least oxygen and C—H combination in the first metal element; forming an atomic layer of the first metal element and the oxygen by inducing reduction reaction of the first organism source and a NH 3 gas, which are adsorbed on the surface of the substrate; adsorbing a second organism source combining a ligand, wherein the ligand includes at least oxygen and C—H combination on the titanium; and forming an atomic layer of the titanium and the oxygen by inducing reduction reaction of the second organism source and the NH 3 gas, which are adsorbed on the surface of the substrate. |